gan doherty hybrid amplifier rth26007 - 10 korean facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 1 / 7 version 1. 2 product features application s ? gan on si c chip on board ? surface mount hybrid type ? asymmetric doherty amplifier ? high efficiency ? no matching circuit needed ? rf sub - systems ? base station ? rrh ? 4g/ lte system ? small cell description accom modating the future of 4g/lte small cells, rfhic introduces rth26007 - 10 amplifier fabricated using an advanced high power density gallium nitride (gan) semiconductor process. this high performance amplifier achieves high efficiency of 4 5 % , and powers 7w ov er the frequency range from 2610mhz to 2690mhz. integrated with asymmetrical doherty configurations, rth series is packaged in a ve ry small form - factor 28 x 19 x 4.8 mm on ain (aluminum nitride) board which provides excellent thermal dissipation. electrica l specification s @ v ds = 31 v , t a =25 p arameter u nit min typ max condition frequency range mhz 2 610 - 2 690 z s = zl = 50 ohm power gain db 11 13 - carrier idq = 12 0 ma vgp = - 4.8v gain flatness - 3.0 - 3.0 input return loss - - 9 - 6 pout @ average db m - 38.5 - pout @ p sat db m 4 6 47 - pulse width= 2 0us, duty 10% aclr @ bw 10mhz lte (papr 7.5db) dbc - - 27 - 24 non dpd - - 5 3 - with dpd drain efficiency % 40 4 5 - carrier idq ma - 120 - total ids - 5 00 - supply v oltage v - - 3. 5 - 2.0 vgc - - 5 .0 - 4.0 vgp 30.5 31 31.5 vds ca ution the drain voltage must be supplied to the device after the gate voltage is supplied turn on : turn on the gate v oltage supply and last turn o n the drain voltage supplies turn off : turn off the drain v oltage and last turn off the gate voltage n ote 1. aclr measured pout=38.5 dbm @ fc 10mhz / 9.015mhz lte 10mhz 1fa papr=7.5db @ 0.01% probability on ccdf , ( dpd engine: optichron op6180) 2. rth series have internal dc blocking capacitors at the rf input and output ports mechanical specifications param eter u nit t yp remark mass g 5 - dimension L 2 8 x 1 9 x 4.8 - package type : np - 8cl
gan doherty hybrid amplifier rth26007 - 10 korean facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 2 / 7 version 1. 2 absolute maximum ratings parameter u nit r ating s ymbol gate - source voltage v - 10 ~ 0 vg c vgp drain - source voltage v 50 v ds gate current m a 4.0 igs operating junction temperature c 225 t j operating case temperature c - 35 ~ 8 5 t c storage temperature c - 40 ~ 1 0 0 t stg operating v oltages *vgp(peaking gate voltage) set: lower vgp of - 1. 87 v at peaking idq 10ma parameter u nit m in t yp m ax s ymbol drain voltage v 30.5 31 31.5 v ds gate voltage (on - stage) v - vgc @carrier idq - 2 v gc gate voltage (on - stage) v - vgp - 2 v gp gate voltage (off - stage) v - - 8 - v gc gate voltage (off - stage) v - - 8 - v gp rf input level db - - 35 pin block diagram *note directional coupler, isolator and drive amplifier must be located close to the dut(device under test ) is needed for best performance.
gan doherty hybrid amplifier rth26007 - 10 korean facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 3 / 7 version 1. 2 application circuit part list l ocation model no. spec. maker c 3 , c 4 1812c225k101ct 2.2uf / 100v walsin c1 , c 2 c3216x7r1c106k 10uf / 16v tdk evaluation board ro4350 b 2layer, 30 mil rogers
gan doherty hybrid amplifier rth26007 - 10 korean facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 4 / 7 version 1. 2 performance charts * bias condition @ carrier idq = 120 ma, vgp= 4.8v , ta=25 power gain vs. frequency psat vs. frequency 10 11 12 13 14 15 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 power gain [db] frequency[ghz] power gain @pout=38.5dbm 43 44 45 46 47 48 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 psat [dbm] frequency[ghz] psat @pulse width 20us (duty 10%) aclr vs. frequency drain efficiency vs. frequency - 35 - 33 - 31 - 29 - 27 - 25 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 aclr [dbc] frequency[ghz] aclr @lte 10mhz(w/o dpd) 40 42 44 46 48 50 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 efficiency [%] frequency[ghz] efficiency aclr with digital predistortion ids vs. frequency - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 2625 2633 2642 2650 2658 2667 2675 aclr [dbc] frequency[mhz] w/o dpd w dpd *dpd engine: optichron op618 0 450 470 490 510 530 550 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 ids[ma] frequency[ghz] ids @pout=38.5dbm -
gan doherty hybrid amplifier rth26007 - 10 korean facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 5 / 7 version 1. 2 package dimensions (type: np - 8c l ) * u nit: mm[inch] | tolerance: 0.15 [.008 ] top view side view bottom view pin description pin no function pin no function pin no function pin no function 1 gnd 4 vgp 7 gnd 1 0 vds 2 rf input 5 gnd 8 rf output 1 1 gnd 3 gnd 6 vds 9 gnd 1 2 vgc recommended pattern recommended mounting c onfiguration * mounting configuration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove h eat. 2. to properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. we recommend the mounting screws be added near the heatsink to mount the board 3. in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder m ask on the backside of the pcb in the region where the board contacts the heatsink 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure opt imal thermal performance.
gan doherty hybrid amplifier rth26007 - 10 korean facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 6 / 7 version 1. 2 precautions this product is a gallium ni tride transistor. the gallium nitride transistor requires a negative voltage bias which operates alongside a positive voltage bias. these biase s are applied in accordance to the sequence during turn - on and turn - off. the pallet amplifier does not have a bui lt - in bias sequence circuit. therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn - on 1 . connect gnd 2. apply gate voltage ( vg c and vgp) 3. apply drain voltage ( v ds ) 4. apply the rf power during turn - off 1. turn off rf power 2. turn off drain voltage (vds) , and then, turn off the gate voltage ( vg c and vgp) 3. remove all connections turn o n turn off - sequence timing diagram -
gan doherty hybrid amplifier rth26007 - 10 korean facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 7 / 7 version 1. 2 reflow p rofile * reflow oven settings zone a b c d e f temperature( c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 / sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 se c 5 ~ 10 sec 60 ~ 90 sec reflow cycle limit= 1time * measured reflow profile ordering information part number package design rth26007 - 10 - r (reel) - b (bulk) - ev b (evaluation board) revision history part number release date version modifica tion data sheet status rth26007 - 10 201 4.05 . 1 6 1. 2 operating case temperature ( 2p) - rth26007 - 10 2013.11.15 1.1 electrical specification - rth26007 - 10 2013.06.04 1.0 electrical specification operating voltage & input level - rfhic corporation reserves the right to make changes to any products herein or to discontinue any product at any time without n otice. while product spec ifications have been thoroughly examined for reliability, rfhic corporation strongly recommends buyers to verify that the informat ion they are using is accurate before ordering. rfhic corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, inc luding without limitation consequential or incidental da mages. rfhic products are not intended for use in life support equipment or application where malfunction o f the product can be expected to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized applic ation, buyer shall indemnify, protect and hold rfhic corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorize d use. sales, inquiries and support should be directed to the local authorized geographic distributor for rfhic corporation. for custome rs in the us, please cont act the us sales team at 919 - 6 77 - 8780 . for all other inquiries, please contact the international sales team at 82 - 31 - 250 - 5078.
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